Hybrid III-V/Si Photonic Crystal Nanolasers
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Date
2024
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Doctoral Thesis
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Abstract
This thesis explores novel nanolaser concepts and implementations tailored for photonic integrated circuits. Enabling energy-efficient, high-speed data transmission, integrated photonics are a key driver in modern technological advancements. However, the integration of efficient III-V semiconductor light sources into the mature Si platform remains challenging. Using template-assisted selective epitaxy (TASE) to address this challenge, the strengths of both materials are combined in a unique hybrid III-V/Si platform for photonic crystal cavity nanolasers.
Key findings include reduced lasing thresholds in hybrid InP/Si photonic crystal cavities, demonstrating the advantages of co-integrating III-V materials with Si, as well as the successful realization of hybrid InGaAs/Si PhC cavities for telecom-band emission. Further advancements apply topological concepts to achieve single-mode lasing in a Su-Schrieffer-Heeger lattice.
These results underscore the potential of the hybrid III-V/Si platform to provide scalable, integrated light sources with broad applications in data communication, sensing, and beyond.
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Examiner : Faist, J.
Examiner : Moselund, K.E.
Examiner : Lee, C.
Examiner : Koblmüller, G.
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ETH Zurich
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03759 - Faist, Jérôme / Faist, Jérôme