Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients
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Author / Producer
Date
2009
Publication Type
Journal Article
ETH Bibliography
yes
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Altmetric
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Publication status
published
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Book title
Journal / series
Volume
30 (9)
Pages / Article No.
996 - 998
Publisher
IEEE
Event
Edition / version
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Software
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Date collected
Date created
Subject
Mobility; Monte Carlo (MC) device simulation; PMOS; piezoconductance coefficients; stress engineering