Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 K


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Date

2013-02

Publication Type

Journal Article

ETH Bibliography

yes

Citations

Altmetric
METADATA ONLY

Data

Rights / License

Publication status

published

Editor

Book title

Journal / series

IEEE Transactions on Electron Devices

Volume

60 (2)

Pages / Article No.

787 - 792

Publisher

IEEE

Event

Edition / version

Methods

Software

Geographic location

Date collected

Date created

Subject

$R_{c}$ , $R_{g}$; Annealed; InP HEMT; Contact; Cryogenic; Gate; Nonannealed; Process metals; Resistance; Temperature dependence

Organisational unit

03721 - Bolognesi, Colombo / Bolognesi, Colombo check_circle

Notes

Published online 14 January 2013.

Funding

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