Industrially microfabricated ion trap with 1 eV trap depth
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Date
2022-07
Publication Type
Journal Article
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yes
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Abstract
Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric three-dimensional (3D) structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked eight-inch wafers in a large-scale micro-electro-mechanical system microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 μm standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a ⁴⁰Ca⁺ ion held at 200 μm from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within ±5% for mode frequencies spanning 0.6–3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.
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published
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Journal / series
Volume
7 (3)
Pages / Article No.
35015
Publisher
IOP Publishing
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Software
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Organisational unit
03892 - Home, Jonathan / Home, Jonathan
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Funding
801285 - Portable Ion Devices for Mobile-Oriented Next-generation semiconductor Technologies (EC)