FinFET to nanowire transition at 5nm design rules
dc.contributor.author
Smith, Lee
dc.contributor.author
Choi, Munkang
dc.contributor.author
Frey, Martin
dc.contributor.author
Moroz, Victor
dc.contributor.author
Ziegler, Anne
dc.contributor.author
Luisier, Mathieu
dc.date.accessioned
2017-06-11T23:45:41Z
dc.date.available
2017-06-11T23:45:41Z
dc.date.issued
2015
dc.identifier.isbn
978-1-4673-7858-1
dc.identifier.other
10.1109/SISPAD.2015.7292307
dc.identifier.uri
http://hdl.handle.net/20.500.11850/111818
dc.language.iso
en
dc.publisher
IEEE
dc.title
FinFET to nanowire transition at 5nm design rules
dc.type
Conference Paper
ethz.book.title
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
ethz.pages.start
254
ethz.pages.end
257
ethz.event
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2015)
ethz.event.location
Washington, DC, USA
ethz.event.date
September 9-11, 2015
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.date.deposited
2017-06-11T23:46:02Z
ethz.source
ECIT
ethz.identifier.importid
imp5936540b801cf21791
ethz.ecitpid
pub:173291
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-20T12:58:50Z
ethz.rosetta.lastUpdated
2024-02-01T23:47:09Z
ethz.rosetta.versionExported
true
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Conference Paper [35293]