Performance predictions of single-layer InV double-gate n- and p-type field-effect transistors
Publikationsstatus
publishedExterne Links
Buchtitel
2016 IEEE International Electron Devices Meeting (IEDM)Seiten / Artikelnummer
Verlag
IEEEKonferenz
Organisationseinheit
03925 - Luisier, Mathieu / Luisier, Mathieu
Anmerkungen
Also published by: http://dx.doi.org/10.3929/ethz-a-010810577.