Analysis and numerical simulation of current filamentation in power semiconductor devices
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Author
Date
1992Type
- Doctoral Thesis
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https://doi.org/10.3929/ethz-a-000695771Publication status
publishedExternal links
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ETH ZürichSubject
HALBLEITER + HALBLEITERTECHNOLOGIE (ELEKTROTECHNIK); MODELLRECHNUNG/ELEKTROTECHNIK, ELEKTRONIK, NACHRICHTENTECHNIK, MIKROELEKTRONIK; LEISTUNGSELEKTRONIK; HALBLEITERBAUELEMENTE + ELEKTRONISCHE BAUELEMENTE (ELEKTRONIK); NUMERISCHE METHODEN IN DER PHYSIK (NUMERISCHE MATHEMATIK); ELEKTRISCHE LADUNG IN HALBLEITERN (ELEKTROSTATIK); ABSCHALTTHYRISTOREN, GTO (ELEKTRONIK); LEISTUNGSHALBLEITER (ELEKTRONIK); SEMICONDUCTORS + SEMICONDUCTOR TECHNOLOGY (ELECTRICAL ENGINEERING); MATHEMATICAL MODELING IN ELECTRICAL ENGINEERING, ELECTRONICS, TELECOMMUNICATIONS, MICROELECTRONICS; POWER ELECTRONICS; SEMICONDUCTOR COMPONENTS + ELECTRONIC COMPONENTS (ELECTRONICS); NUMERICAL METHODS IN PHYSICS (NUMERICAL MATHEMATICS); ELECTRIC CHARGE IN SEMICONDUCTORS (ELECTROSTATICS); GATE TURN-OFF THYRISTORS, GTO (ELECTRONICS); POWER SEMICONDUCTORS (ELECTRONICS)Notes
Diss. Naturwiss. ETH Zürich, Nr. 9866, 1992. Ref.: T. M. Rice ; Korref.: W. Fichtner.More
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