2D and 3D TCAD simulation of III-V channel FETs at the end of scaling
dc.contributor.author
Aguirre, Paulina
dc.contributor.author
Rau, Martin
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2018-08-10T16:50:32Z
dc.date.available
2018-08-10T08:40:26Z
dc.date.available
2018-08-10T16:50:32Z
dc.date.issued
2018
dc.identifier.isbn
978-1-5386-4811-7
en_US
dc.identifier.isbn
978-1-5386-4810-0
en_US
dc.identifier.isbn
978-1-5386-4812-4
en_US
dc.identifier.other
10.1109/ULIS.2018.8354744
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/281719
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
2D and 3D TCAD simulation of III-V channel FETs at the end of scaling
en_US
dc.type
Conference Paper
dc.date.published
2018-05-07
ethz.book.title
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
en_US
ethz.pages.start
8354744
en_US
ethz.size
4 p.
en_US
ethz.event
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
en_US
ethz.event.location
Granada, Spain
en_US
ethz.event.date
March 19-21
en_US
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2018-08-10T08:40:38Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-08-10T16:51:00Z
ethz.rosetta.lastUpdated
2018-08-10T16:51:00Z
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false
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true
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Conference Paper [34969]