Time-Resolved Short Circuit Failure Analysis of SiC MOSFETs
dc.contributor.author
Ziemann, Thomas
dc.contributor.author
Tsibizov, Alexander
dc.contributor.author
Kakarla, Bhagyalakshmi
dc.contributor.author
Bort, Lorenz
dc.contributor.author
Grossner, Ulrike
dc.date.accessioned
2020-03-24T07:37:24Z
dc.date.available
2019-09-26T02:17:52Z
dc.date.available
2019-09-26T10:08:03Z
dc.date.available
2020-03-23T16:38:47Z
dc.date.available
2020-03-24T07:37:24Z
dc.date.issued
2019-05
dc.identifier.isbn
978-1-7281-0581-9
en_US
dc.identifier.isbn
978-1-7281-0580-2
en_US
dc.identifier.isbn
978-1-7281-0579-6
en_US
dc.identifier.isbn
978-1-7281-0582-6
en_US
dc.identifier.issn
1063-6854
dc.identifier.other
10.1109/ISPSD.2019.8757564
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/366450
dc.identifier.doi
10.3929/ethz-b-000366450
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.title
Time-Resolved Short Circuit Failure Analysis of SiC MOSFETs
en_US
dc.type
Conference Paper
dc.rights.license
In Copyright - Non-Commercial Use Permitted
dc.date.published
2019-07-11
ethz.book.title
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
en_US
ethz.pages.start
219
en_US
ethz.pages.end
222
en_US
ethz.version.deposit
acceptedVersion
en_US
ethz.event
31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
en_US
ethz.event.location
Shanghai, China
en_US
ethz.event.date
May 19-23, 2019
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.date.deposited
2019-09-26T02:17:56Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2019-09-26T10:08:16Z
ethz.rosetta.lastUpdated
2021-02-15T09:18:22Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Time-Resolved%20Short%20Circuit%20Failure%20Analysis%20of%20SiC%20MOSFETs&rft.date=2019-05&rft.spage=219&rft.epage=222&rft.issn=1063-6854&rft.au=Ziemann,%20Thomas&Tsibizov,%20Alexander&Kakarla,%20Bhagyalakshmi&Bort,%20Lorenz&Grossner,%20Ulrike&rft.isbn=978-1-7281-0581-9&978-1-7281-0580-2&978-1-7281-0579-6&978-1-7281-0582-6&rft.genre=proceeding&rft_id=info:doi/10.1109/ISPSD.2019.8757564&rft.btitle=2019%2031st%20International%20Symposium%20on%20Power%20Semiconductor%20Devices%20and%20ICs%20(ISPSD)
Dateien zu diesem Eintrag
Publikationstyp
-
Conference Paper [34989]