Performance Comparison of GaSb, Strained-Si, and InGaAs Double-Gate Ultrathin-Body n-FETs
Metadata only
Autor(in)
Datum
2011-12Typ
- Journal Article
ETH Bibliographie
yes
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Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
IEEE Electron Device LettersBand
Seiten / Artikelnummer
Verlag
IEEEThema
Electric potential; FETs; Indium gallium arsenide; Logic gates; Performance evaluation; Scattering; SiliconOrganisationseinheit
03228 - Fichtner, Wolfgang03925 - Luisier, Mathieu / Luisier, Mathieu
Anmerkungen
Manuscript received 17 August 2011, Revised 6 September 2011, Accepted 7 September 2011.ETH Bibliographie
yes
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