Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors
Metadata only
Datum
2011-12Typ
- Journal Article
ETH Bibliographie
yes
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Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
Applied Physics LettersBand
Seiten / Artikelnummer
Verlag
American Institute of PhysicsThema
Conduction bands; Elemental semiconductors; Fluctuations; Interface roughness; MOSFET; Nanowires; Physiological models; Silicon; Surface scattering; Tight-binding calculationsOrganisationseinheit
03925 - Luisier, Mathieu / Luisier, Mathieu
03228 - Fichtner, Wolfgang
Anmerkungen
Received 22 October 2011, Accepted 11 November 2011, Published online 6 December 2011.ETH Bibliographie
yes
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