Evaluation of the Imax-fsw-dv/dt Trade-off of High Voltage SiC MOSFETs Based on an Analytical Switching Loss Model
Open access
Datum
2020Typ
- Conference Paper
Abstract
Advanced high voltage (3.3-15kV) SiC MOSFETs have been developed for future medium voltage converters over the past decade due to their superior performance. In order to better understand the operation limits and potential of these devices, this paper evaluates the I max -f sw -dv/dt trade-off (maximal current-handling capability at a specific switching frequency and at a defined switching speed) for high voltage SiC MOSFETs based on a proposed linearized analytical switching loss model. There, high voltage SiC MOSFETs manufactured by Cree combined with data from literature for scaling are used as reference. Mehr anzeigen
Persistenter Link
https://doi.org/10.3929/ethz-b-000495882Publikationsstatus
publishedBuchtitel
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)Seiten / Artikelnummer
Verlag
IEEEKonferenz
Thema
Power semiconductor device; Wide bandgap devices; Silicon Carbide (SiC); MOSFET; Switching losses; Device modeling; Thermal stressOrganisationseinheit
03889 - Biela, Jürgen / Biela, Jürgen
Anmerkungen
Due to the Coronavirus (COVID-19) the conference was conducted virtually.