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Datum
2007-04Typ
- Conference Paper
ETH Bibliographie
yes
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Abstract
We report on Raman measurements of single‐ and few‐layer graphene flakes. Raman mapping in combination with scanning force microscopy allows us to locally relate the thickness of the graphite flake with the spectral properties. It turns out that the width of the D’ line is highly sensitive to the transition from single‐ to double‐layer graphene. The defect‐induced D line is found to be most prominent at steps between sections of different height and along the edge of the graphite flake. Mehr anzeigen
Publikationsstatus
publishedExterne Links
Buchtitel
Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006Zeitschrift / Serie
AIP Conference ProceedingsBand
Seiten / Artikelnummer
Verlag
American Institute of PhysicsKonferenz
Thema
Graphite; Raman spectroscopyOrganisationseinheit
03609 - Hierold, Christofer / Hierold, Christofer
ETH Bibliographie
yes
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