3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction
dc.contributor.author
Bufler, F.M.
dc.contributor.author
Smith, L.
dc.date.accessioned
2017-06-11T00:46:22Z
dc.date.available
2017-06-11T00:46:22Z
dc.date.issued
2013-12
dc.identifier.issn
1569-8025
dc.identifier.issn
1572-8137
dc.identifier.other
10.1007/s10825-013-0518-z
dc.identifier.uri
http://hdl.handle.net/20.500.11850/75447
dc.identifier.doi
10.3929/ethz-b-000075447
dc.format
application/pdf
dc.language.iso
en
dc.publisher
Springer
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
3D Monte Carlo
dc.subject
Quantum effects
dc.subject
Fully-depleted SOI devices
dc.subject
FinFET
dc.title
3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction
dc.type
Journal Article
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.journal.title
Journal of Computational Electronics
ethz.journal.volume
12
ethz.journal.issue
4
ethz.journal.abbreviated
J Comput Electron
ethz.pages.start
651
ethz.pages.end
657
ethz.version.deposit
publishedVersion
ethz.notes
Published online 7 November 2013. It was possible to publish this article open access thanks to a Swiss National Licence with the publisher
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
004385706
ethz.publication.place
Berlin
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-11T00:49:31Z
ethz.source
ECIT
ethz.identifier.importid
imp593651427edef10775
ethz.ecitpid
pub:119086
ethz.eth
yes
ethz.availability
Open access
ethz.date.embargoend
2018-12-01
ethz.rosetta.installDate
2017-07-19T11:29:06Z
ethz.rosetta.lastUpdated
2024-02-01T21:10:51Z
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true
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