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High performance mid- and far-infrared quantum cascade lasers
(2004)2004 IEEE LEOS Annual Meeting Conference Proceedings (LEOS 2004)Low threshold and highly tunable mid-infrared lasers are demonstrated based on a bound to continuum active region. Tunable emission over more than 150 cm/sup -1/ have been achieved. Terahertz quantum cascade lasers based on a bound to continuum active regions combined with an optical phonon extraction. Operation up to 117 K is demonstrated.Conference Paper -
Novel photonic crystal quantum cascade laser platform
(2006)Proceedings of CLEO/QELS06 ~ Conference on Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006Conference Paper -
Chemical sensing with a pulsed 16 microns QC-DFB laser
(2002)Trends in Optics and Photonics Series ~ Technical digest: Summaries of papers presented at the Conference on Lasers and Electro-Optics, Long Beach Convention Center, Long Beach, California, May 19-24, 2002Conference Paper -
SiGe quantum cascade structures: physics, growth and technology
(2006)2006 International SiGe Technology and Device MeetingThe demonstration of a semiconductor laser based on intersubband transitions in an InGaAs/InP cascade structure, has stimulated studies to transfer this approach to Si/SiGe. The feature, that intersubband transitions are by nature direct, made it appealing to use this concept to create a laser in a material with an indirect bandgap like Si. A laser in Si would allow the monolithic integration of optical active devices with mature Si ...Conference Paper -
Fabrication and optical characterization of photonic crystal quantum cascade lasers at terahertz frequencies
(2005)2005 Pacific Rim Conference on Lasers and Electro-OpticsWe will present the fabrication process and laser characterization of electrically contacted photonic crystal quantum cascade lasers emitting at 100μm. Using photonic crystals as reflectors enables monomode emission with low threshold currents.Conference Paper -
Optical control processes in terahertz quantum-cascade laser waveguides
(2005)Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies. Technical Digest (CD)Conference Paper -
High power continuous wave operation of mid-infrared quantum cascade lasers
(1997)Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)In recent years laser emission from unipolar quantum cascade (QC) structures has been demonstrated in a wide range of wavelengths and temperatures. Continuous wave (CW) operation has also been reported, but with limited output powers (a few tens of mW). We present here the results obtained on a mid-infrared QC laser, whose design has been carefully optimized in order to maximize the injection efficiency and the gain. The device employs a ...Conference Paper -
Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures
(2001)Physica E: Low-dimensional Systems & NanostructuresThe principle of intersubband emission is applied to the Si/SiGe material system, using hole intersubband transitions in structures grown pseudo-morphically on Si substrate by molecular beam epitaxy. Cascade structures consisting of three times four repetitions of a five quantum well sequence are investigated. The design constraints are found to be imposed mainly by the total amount of strain, giving limitations to the number of wells per ...Conference Paper -
Strategies to improve optical gain and waveguide loss in SiGe quantum cascade devices
(2005)2nd IEEE International Conference on Group IV PhotonicsConference Paper -
Transport and absorption in strain-compensated Si/Si1-xGex multiple quantum well and cascade structures deposited on Si0.5Ge0.5 pseudosubstrates
(2005)Materials Science in Semiconductor ProcessingVarious strain-compensated Si/SiGe quantum well structures with high Ge concentrations in the SiGe wells (70–85% Ge) have been successfully deposited by very low-temperature molecular beam epitaxy on thick strain-relaxed Si0.5Ge0.5 buffer layers. The samples have been subject to intensive and careful characterization of their structural, electronic and optical properties. X-ray diffraction and reflectivity measurements using synchrotron ...Conference Paper