Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure
Metadata only
Autor(in)
Datum
2014Typ
- Journal Article
ETH Bibliographie
yes
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Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
Journal of Crystal GrowthBand
Seiten / Artikelnummer
Verlag
ElsevierThema
High pressure method; Single oystal growth; Hexagonal boron nitride; Semiconducting III-V materialsOrganisationseinheit
03569 - Batlogg, Bertram (emeritus)
Anmerkungen
Received 28 May 2014, Received in revised form 17 June 2014, Accepted 19 June 2014, Available online 25 June 2014.ETH Bibliographie
yes
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