Steady and transient thermal simulation of GaN devices for high-speed switching applications
Metadata only
Datum
2014Typ
- Journal Article
ETH Bibliographie
yes
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Publikationsstatus
publishedZeitschrift / Serie
Journal of Japan Institute of Electronics PackagingBand
Seiten / Artikelnummer
Verlag
Japan Institute of Electronics PackagingThema
Equivalent thermal circuit; GaN; High-speed and high-frequency device; High-speed switching; Transient stateOrganisationseinheit
03380 - Huang, Qiuting (emeritus) / Huang, Qiuting (emeritus)
ETH Bibliographie
yes
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