Electron-electron interaction in p-SiGe/Ge quantum wells
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Author / Creator
Date
2005-12
Publication Type
Conference Paper
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yes
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Abstract
The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 × 10¹¹ cm⁻². At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm²/Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect. © 2005 Elsevier B.V. All rights reserved.
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Publication status
published
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Book title
Journal / series
Volume
124
Pages / Article No.
184 - 187
Publisher
Elsevier
Event
Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting
Edition / version
Methods
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Date collected
Date created
Subject
Electron-electron interaction; Magnetoresistance; Hole densities
Organisational unit
03569 - Batlogg, Bertram (emeritus)
Notes
Available online 22 September 2005.