Robust Numerical Solver for Nonlinear Semiconductor Problems
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Date
2025-09
Publication Type
Journal Article
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yes
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Abstract
In this work, we develop a numerical solver, efficiently and robustly treating highly nonlinear semiconductor device problems. Beyond the capabilities of commercial tools, the solver can compute the time-domain capacitance and the spectrum of the device current. The solver is based on the finite element method (FEM) and employs the successive under-relaxation scheme. Its capability has been assessed and validated in a study of an axisymmetric metal-oxide–semiconductor (MOS) structure, presenting an archetypal scanning microwave microscopy (SMM) calibration sample, with both n- and p-doped semiconductors, including different excitation sources. Excellent agreement was obtained, when testing the tool against features of a commercial tool. By computing the capacitance for the applied low-frequency (LF) bias, combined with a high-frequency (HF) probe signal, the spectrum of the current flowing in the structure was evaluated, revealing mix-product components. This allowed us to verify the solver against measurements, resulting in a very good agreement.
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Publication status
published
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Book title
Journal / series
Volume
79 (3)
Pages / Article No.
6051 - 6058
Publisher
IEEE
Event
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
Drift-diffusion model (DDM); finite element method (FEM); scanning microwave microscopy (SMM); Semiconductor
Organisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg
02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields
Notes
Funding
23IND03 RF 4 6G - RF key quantities for 6G development (SBFI)