Electron gas quality at various (110)-GaAs interfaces as benchmark for cleaved edge overgrowth
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Author / Producer
Date
2016-12
Publication Type
Journal Article
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yes
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published
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Journal / series
Volume
455
Pages / Article No.
37 - 42
Publisher
Elsevier
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Subject
A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B3. Cleaved edge overgrowth
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Notes
Received 21 June 2016, Revised 8 September 2016, Accepted 10 September 2016, Published online 12 September 2016.