Analysis of the propagation losses of InP/InGaAsP trench waveguides fabricated by focused ion beam
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Date
2010
Publication Type
Journal Article
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yes
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Abstract
Focused ion beam was used to fabricate 2 mm-long, 4 μm-wide and 4 μm-deep multimode trench waveguides in InP/InGaAsP. An automated stitching method was developed to fabricate mm-long structures using alignment marks. The waveguides were sputtered or etched using I₂ at room temperature and 150 °C stage temperature. The propagation losses induced by the different fabrication techniques were measured and ranged between 50 and 82 dB/cm. A damaged layer with implanted Ga and the sidewall roughness are identified to be the most important causes for the losses. FIB is shown to be a single-step fabrication technique for rapid-prototyping of photonic structures in InP/InGaAsP. © 2010 Elsevier Ltd. All rights reserved.
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published
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87 (11)
Pages / Article No.
2061 - 2064
Publisher
Elsevier
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Subject
Focused ion beam; Microstructuring; Sputtering; Gas-assisted etching; InP; Multimode trench waveguides; Propagation losses
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Notes
Received 7 September 2009, Revised 30 November 2009, Accepted 21 December 2009, Available online 6 January 2010.