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Precise mid-infrared characterization of InGaSb/GaSb SESAMs
(2021)2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)There is a strong interest in mid-infrared (mid-IR) Semiconductor Saturable Absorber Mirrors (SESAMs) [1]. We have established an accurate nonlinear reflectivity and time-resolved SESAM characterization which covers a wavelength range from 1.9 μm to 3 μm transferring our near-IR knowhow [2] , [3] to the mid-IR ( Fig. 1a , 1b ). The nonlinear reflectivity of a SESAM is characterized by the saturation fluence, modulation depth, non-saturable ...Other Conference Item -
Mid-infrared type-I InGaSb/GaSb quantum well SESAM
(2021)2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)A Semiconductor Saturable Absorber Mirror (SESAM) is a key optical component used extensively for passively modelocking of diode-pumped solid-state and semiconductor disk lasers. Modulation depth (ΔR), saturation fluence (F sat ), non-saturable losses (ΔR ns ) and recovery times are the key parameters of a SESAM, which depend on semiconductor layer design and growth parameters. It has been shown that the recovery dynamics of InGaSb-based ...Other Conference Item -
40 W SESAM-modelocked Ho:YAG thin-disk laser at 2090 nm
(2021)2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)High power ultrafast lasers in the short-wave mid-IR wavelength region (2-3 µm) are of great interest for a large number of applications in science and technology. Finding paths to increase the average power of ultrafast laser systems directly emitting in this wavelength region has seen particularly strong interest, due to the potential of these sources as direct drivers for the generation of XUV, mid-IR and THz. Among different power-scalable ...Other Conference Item -
1-Watt SESAM-Modelocked fs-Cr:ZnS Oscillator at 2.4 µm
(2021)2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)Cr:ZnS lasers delivering mid-infrared (mid-IR) femtosecond (fs) pulses directly from an oscillator have seen a substantial progress in research over the last decade [1] , [2] . Both power and pulse width scaling have been the main focus of the research. Such lasers are especially useful to drive efficient nonlinear processes to generate broadband long-wave infrared sources for high-sensitivity spectroscopy in the molecular fingerprint ...Other Conference Item -
2.4-µm SESAM modelocked high-power repetition rate scalable femtosecond Cr:ZnS oscillator
(2021)Other Conference Item -
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Power scaling of ultrafast 2-µm thin-disk laser oscillators
(2022)Proceedings of SPIE ~ Solid State Lasers XXXI: Technology and DevicesMany scientific and industrial applications can potentially benefit from high repetition rate, ultrafast short-wave infrared (SWIR) lasers operating at high average power. Modelocked thin-disk lasers are particularly promising in this aspect, as they can outperform amplifier schemes from a simple multi-MHz oscillator. In our work, we demonstrate latest advances in high-power 2µm TDLs, and present a continuous-wave Ho:YAG thin-disk oscillator ...Other Conference Item -
Recent advances of InGaSb SESAMs in the 2 to 2.4-µm wavelength regime
(2022)Proceedings of SPIE ~ Vertical External Cavity Surface Emitting Lasers (VECSELs) XIWe present the characterization under intracavity conditions of semiconductor saturable absorber mirrors (SESAMs) operating from 2 – 2.4 µm. The precise nonlinear reflectivity and recovery time measurement setups reveal excellent parameters of our in-house grown 2.05 and 2.4 µm SESAMs. Low saturation fluences around 4 µJ/cm2, percent range modulation depth, extremely low non-saturable losses and fast recovery within a few tens of picoseconds ...Other Conference Item -
First SESAM-modelocked VECSEL without intracavity heatspreaders at a center wavelength of around 2 µm
(2022)Proceedings of SPIE ~ Vertical External Cavity Surface Emitting Lasers (VECSELs) XIWe present our first flip-chip processed, modelocked InGaSb vertical external-cavity surface-emitting laser (VECSEL) in the 2-µm wavelength range. The optically pumped VECSEL is passively modelocked with a semiconductor saturable absorber mirror (SESAM) resulting in 2.7-ps pulses with 89-mW average output power at a center wavelength of 2063 nm and a pulse repetition rate of 1.96 GHz. The standing-wave V-shaped cavity is formed by a 1% ...Other Conference Item -
Development and optical characterization of 2.1-µm SESAMs optimized for high-power operation in Ho-doped lasers
(2021)Other Conference Item