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dc.contributor.author
Kull, Lukas
dc.contributor.author
Luu, Danny
dc.contributor.author
Menolfi, Christian
dc.contributor.author
Braendli, Matthias
dc.contributor.author
Francese, Pier A.
dc.contributor.author
Morf, Thomas
dc.contributor.author
Kossel, Marcel
dc.contributor.author
Cevrero, Alessandro
dc.contributor.author
Ozkaya, Ilter
dc.contributor.author
Toifl, Thomas
dc.date.accessioned
2022-06-03T09:49:32Z
dc.date.available
2019-03-05T09:46:54Z
dc.date.available
2022-06-03T09:49:32Z
dc.date.issued
2018
dc.identifier.isbn
978-1-5090-4940-0
en_US
dc.identifier.isbn
978-1-5386-2227-8
en_US
dc.identifier.other
10.1109/ISSCC.2018.8310332
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/329096
dc.description.abstract
Optical communication standards, such as ITU OTU-4, OIF 112G and 100/400Gb/s Ethernet, require ADCs with more than 50GS/s and at least 5 ENOB to enable complex digital equalization, and a growing number of appropriate designs have been presented [1-4], mostly time-interleaved SAR ADCs. Most of these ADCs were not intended for input frequencies up to Nyquist and report an input range up to approximately 20GHz, often equivalent to the analog 3dB bandwidth. Ultimately, the analog bandwidth is less relevant than SNDR at high frequencies because an FIR filter can equalize amplitude degradation, but not increase SNDR. The design presented in this paper does not focus on the 3dB bandwidth, but it is optimized for best SNDR at the Nyquist frequency of up to 36GHz. Low power and area are critical for many applications and are achieved by an optimized SAR that allows low supply voltages while still maintaining high speed and accuracy. At 72GS/s, the ADC achieves 39.3dB at low input frequencies and 30.4dB at Nyquist. It consumes 235mW at 72GS/s and 97mW at 48GS/s, which results in 3.3pJ and 2.0pJ per conversion, respectively. The ADC is implemented in an area of 0.15mm 2 in 14nm CMOS FinFET technology.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
A 24-to-72GS/s 8b Time-Interleaved SAR ADC with 2.0-to-3.3pJ/conversion and > 30dB SNDR at Nyquist in 14nm CMOS FinFET
en_US
dc.type
Other Conference Item
dc.date.published
2018-03-12
ethz.book.title
2018 IEEE International Solid-State Circuits Conference (ISSCC)
en_US
ethz.pages.start
358
en_US
ethz.pages.end
360
en_US
ethz.event
65th IEEE International Solid-State Circuits Conference (ISSCC 2018)
en_US
ethz.event.location
San Francisco, CA, USA
en_US
ethz.event.date
February 11-15, 2018
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2018-05-31T04:25:15Z
ethz.source
WOS
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2019-03-05T09:46:59Z
ethz.rosetta.lastUpdated
2023-02-07T03:24:08Z
ethz.rosetta.versionExported
true
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/266725
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/268362
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/270591
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/328658
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=A%2024-to-72GS/s%208b%20Time-Interleaved%20SAR%20ADC%20with%202.0-to-3.3pJ/conversion%20and%20%3E%2030dB%20SNDR%20at%20Nyquist%20in%2014nm%20CMOS%20FinFET&rft.date=2018&rft.spage=358&rft.epage=360&rft.au=Kull,%20Lukas&Luu,%20Danny&Menolfi,%20Christian&Braendli,%20Matthias&Francese,%20Pier%20A.&rft.isbn=978-1-5090-4940-0&978-1-5386-2227-8&rft.genre=unknown&rft_id=info:doi/10.1109/ISSCC.2018.8310332&rft.btitle=2018%20IEEE%20International%20Solid-State%20Circuits%20Conference%20(ISSCC)
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