Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions
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Date
2023Type
- Other Conference Item
ETH Bibliography
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Abstract
The characterization of the carriers' multiplication factor is a key issue for the design of robust and reliable power semiconductor devices and for the assessment of their susceptibility to the terrestrial cosmic radiation. A cryostatic experimental setup is presented for the measurement of the multiplication factor (internal electric field) in a broad class of Si and wide bandgap power devices with the non-invasive charge spectroscopy technique based on the soft-gamma emission of an Americium-241 source introduced in a previous work. A relationship is provided to convert the multiplication factor measured at liquid nitrogen temperature to the multiplication measured at ambient temperature.
The interpretation of the experimental data is supported by an original simulation scheme that couples TCAD and Monte Carlo tools to predict the measured spectra and to locate the hotspots of the multiplication factor. Finally, after evidencing the correlation between the charge multiplication factor and the failure rate of power devices submitted to terrestrial cosmic radiation, the presented cryostatic spectroscopy technique is suggested as a complementary method to assess the Safe-Operating Area. Show more
Publication status
unpublishedEvent
Subject
Terrestrial cosmic rays; SiC power device reliabilityOrganisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
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Is identical to: https://doi.org/10.3929/ethz-b-000580577
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