3-W output power at 2 µm from a flip-chip processed InGaSb VECSEL based on a hybrid metal-semiconductor Bragg reflector

Abstract

The key limiting factor for output power scaling of VECSELs is the thermal resistance of the structure owing to the reflector thickness and the heat conductivity of the semiconductor materials. We have successfully fabricated a flip-chip processed VECSEL emitting at 2 µm using a GaSb/AlAs0.08Sb0.92 hybrid Bragg reflector with 10.5 mirror pairs and a 100–nm copper layer. The flip-chip processed VECSEL reaches a record high continuous wave average output power of 3 W. The device thickness is reduced by 2.5 µm (36%) compared to the standard 19.5 layer semiconductor-only Bragg reflector design.