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Mixed feelings, positive outcomes? How AI-related ambivalence might help overcome errors in human-AI decision-making
(2023)Other Conference Item -
Designing explainable ML-based systems for collaborative work in the railways: First insights
(2023)21st EAWOP Congress Book of AbstractsOther Conference Item -
A taxonomy for the collaborative use of explainable AI systems in the railways
(2023)Other Conference Item -
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Broadband Quantum Cascade Lasers: From White Light Sources to Ttunable Broadband Single Mode Sources
(2010)22nd IEEE International Semiconductor Laser ConferenceWe present the latest advances in the field of broadband quantum cascade lasers for applications requiring broad and gapfree emission or a wide tuning range in the mid-IR. We show a QCL emitting gapfree radiation in pulsed mode from 6 to 7.7 μm capable of room-temperature continious wave operation with output powers of 170 mW at -30°C. We also demonstrate the possibility to replace the glowbar in a FTIR by a broadband free running QCL ...Other Conference Item -
Millimeter-wave load-pull techniques
(2014)In this talk, the challenges in the realization of on-wafer large-signal measurement systems in W-band will be summarized and a recent implementation of a W-band on-wafer load-pull system will be presented. The availability of W-band large signal set-ups opens several possibilities, ranging from technology assessment and large-signal device modeling at sub-THz frequencies, to W-band MMIC design and characterization. Direct and accurate ...Other Conference Item -
InP/GaAsSb DHBT Evolution in the THz Era
(2016)2016 Compound Semiconductor Week (CSW)Summary form only given. The InP-GaAsSb material system is an alternative to InP-GaInAs for the realization of high-speed double heterostructure bipolar transistors (DHBTs) on InP substrates. This paper will review the evolution of InP/GaAsSb DHBTs over the last two decades, and will identify remaining challenges and opportunities. The characteristics of InP/GaAsSb DHBTs will be differentiated from those of the InP/GaInAs variant to clarify ...Other Conference Item -
Integration of III-V heterostructure tunnel FETs on Si using template assisted selective epitaxy (TASE)
(2016)2016 Compound Semiconductor Week (CSW)Summary form only given. In this talk we will discuss fabrication and device aspects of IBMs work on III-V Tunnel FETs. Since our focus is on the monolithic integration of III-V on Si, we will show our recently developed Template Assisted Selective Epitaxy (TASE) technology and its application to both TFETs as well as other electronic devices. In TASE, III-V materials can be grown within templates, which allows for versatility in materials ...Other Conference Item -
Quantum cascade laser frequency combs: physics and applications
(2016)2016 Compound Semiconductor Week (CSW)Summary form only given. The quantum cascade laser has demonstrated the ability to provide gain over a very broad wavelength range, and has found many applications for sensing based on arrays of single frequency lasers or as external cavity lasers. Recently, we have shown that such broadband devices, when operated in continuous wave, emit as a coherent optical comb in which the phase relation between the comb modes corresponds approximately ...Other Conference Item -
From charge detection to Coulomb drag in hybrid graphene/GaAs devices
(2016)2016 Compound Semiconductor Week (CSW)Summary form only given. We present coupled hybrid nanostructures using the combination of lithographically patterned graphene and a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows for tuning the electronic density of the 2DEG. With graphene top gates, high quality nanostructures are defined in the GaAs 2DEG. ...Other Conference Item