Abstract
The aim of this study was to find conditions allowing the "natural" formation of a regular and controllable step bunched morphology on a 4H-SiC seed without the need of any SiC deposition. This was performed by melting a bulk piece of Si on a 4°off 4H seed in the temperature range of 1500 - 1600°C, for 15 min. After etching the remaining Si, the 4H surface was found to be successfully highly step bunched with steps very parallel and regular. A mechanism of dissolution-precipitation was proposed, which could occur both on a short (step to step) and long (centre to periphery) range. This process is kinetically limited at low temperature (1500-1550°C) and considered to be close to the equilibrium at 1600°C. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000117357Publication status
publishedExternal links
Editor
Book title
Silicon Carbide and Related Materials 2015Journal / series
Materials Science ForumVolume
Pages / Article No.
Publisher
Trans Tech PublicationsEvent
Subject
Liquid silicon; CVD; Faceting; StepsOrganisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike
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