Design of High-Performance InAs-Si Heterojunction 2D-2D Tunnel FETs With Lateral and Vertical Tunneling Paths
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Date
2016-12Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
IEEE Transactions on Electron DevicesVolume
Pages / Article No.
Publisher
IEEESubject
2D-2D density-of-state (DOS) switches; InAs-Si tunnel FETs; Lateral and vertical band-to-band tunneling (BTBT)Organisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
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ETH Bibliography
yes
Altmetrics