Charge injection in MOS-integrated sample-and-hold and switched-capacitor circuits
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Author
Date
1989Type
- Doctoral Thesis
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https://doi.org/10.3929/ethz-a-000538691Publication status
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ETH ZürichSubject
MIKROELEKTRONIK + INTEGRIERTE SCHALTUNGEN; METALLOXID-HALBLEITER-INTEGRIERTE SCHALTUNGEN, MOS (MIKROELEKTRONIK); HÖCHSTINTEGRIERTE SCHALTUNGEN, VLSI (MIKROELEKTRONIK); SC-NETZWERKE + SC-SCHALTUNGEN (ELEKTROTECHNIK); STEILHEITSGESTEUERTE OPERATIONSVERSTÄRKER, OTA (ELEKTRISCHE SCHWINGUNGSTECHNIK); MICROELECTRONICS + INTEGRATED CIRCUITS; METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUITS, MOS (MICROELECTRONICS); VERY LARGE SCALE INTEGRATED CIRCUITS, VLSI (MICROELECTRONICS); SC-NETWORKS + SC-CIRCUITS (ELECTRICAL ENGINEERING); OPERATIONAL TRANSCONDUCTANCE AMPLIFIER, OTA (ELECTRICAL OSCILLATION TECHNOLOGY)Notes
Diss. Techn. Wiss. ETH Zürich, Nr. 8969, 1989. Ref.: W. Guggenbühl ; Korref.: W. Bächtold.More
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