Search
Results
-
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
(2023)Materials Science Forum ~ Silicon carbide MOSFETs and special materials : special topic volume with invited peer-reviewed papers onlyCathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.Book Chapter