Simulation of carrier generation in advanced silicon devices
dc.contributor.author
Krumbein, Ulrich
dc.contributor.supervisor
Fichtner, Wolfgang
dc.contributor.supervisor
Melchior, Hans
dc.date.accessioned
2017-06-13T01:59:31Z
dc.date.available
2017-06-13T01:59:31Z
dc.date.issued
1996
dc.identifier.uri
http://hdl.handle.net/20.500.11850/142832
dc.identifier.doi
10.3929/ethz-a-001710318
dc.format
application/pdf
dc.language.iso
en
dc.publisher
ETH Zürich
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
HALBLEITER + HALBLEITERTECHNOLOGIE (ELEKTROTECHNIK)
dc.subject
SILICIUM (CHEMISCHE ELEMENTE)
dc.subject
MODELLRECHNUNG/ELEKTROTECHNIK, ELEKTRONIK, NACHRICHTENTECHNIK, MIKROELEKTRONIK
dc.subject
STOCHASTISCHE APPROXIMATION + MONTE-CARLO-METHODEN (STOCHASTIK)
dc.subject
SEMICONDUCTORS + SEMICONDUCTOR TECHNOLOGY (ELECTRICAL ENGINEERING)
dc.subject
SILICON (CHEMICAL ELEMENTS)
dc.subject
MATHEMATICAL MODELING IN ELECTRICAL ENGINEERING, ELECTRONICS, TELECOMMUNICATIONS, MICROELECTRONICS
dc.subject
STOCHASTIC APPROXIMATION + MONTE CARLO METHODS (STOCHASTICS)
dc.title
Simulation of carrier generation in advanced silicon devices
dc.type
Doctoral Thesis
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.size
IX, 135 S.
ethz.code.ddc
DDC - DDC::6 - Technology, medicine and applied sciences::621.3 - Electric engineering
ethz.notes
Diss. Techn. Wiss. ETH Zürich, Nr. 11639, 1996. Ref.: W. Fichtner ; Korref.: H. Melchior.
ethz.identifier.diss
11639
ethz.identifier.nebis
001710318
ethz.publication.place
Zürich
ethz.publication.status
published
ethz.date.deposited
2017-06-13T01:59:38Z
ethz.source
ECOL
ethz.identifier.importid
imp59366a09ef60150172
ethz.ecolpid
eth:40486
ethz.eth
yes
ethz.availability
Closed access
ethz.rosetta.installDate
2017-07-19T02:15:52Z
ethz.rosetta.lastUpdated
2020-02-14T23:30:59Z
ethz.rosetta.versionExported
true
ethz.COinS
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Doctoral Thesis [29804]