Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High-k Gate Stacks
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Date
2008Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
IEEE Transactions on Electron DevicesVolume
Pages / Article No.
Publisher
IEEESubject
Electron diffraction; gate leakage current; high-κ gate stacks; silicon-on-insulator (SOI) MOSFETs; 2-D Schrödinger–Poisson solverOrganisational unit
03228 - Fichtner, Wolfgang
Notes
Manuscript received December 5 2007.More
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ETH Bibliography
yes
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