Impact of selective Al2O3 passivation on current collapse in AlGaN/GaN HEMTs
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Date
2007-11-08Type
- Journal Article
ETH Bibliography
yes
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Abstract
Current collapse in AlGaN/GaN HEMTs is normally attributed to charged surface states which deplete the channel in the extrinsic gate-to-drain region due to the highest electric fields in the devices. It is demonstrated that the gate-source region also plays a significant role in current collapse through the selective passivation of transistors using evaporated Al2O3 patterned via a lift-off process. The approach allows discriminating between the respective contributions of the source and drain regions to the current collapse. Show more
Publication status
publishedExternal links
Journal / series
Electronics LettersVolume
Pages / Article No.
Publisher
Institution of Engineering and TechnologyOrganisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
03472 - Professur für Feldtheorie (ehemalig)
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ETH Bibliography
yes
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