Abstract
Type-II InP/GaInAsSb-based double heterojunction bipolar transistors (DHBTs) with f MAX =636 GHz and a simultaneous f T =424 GHz were realized with a 20-nm-thick compositionally uniform quaternary GaInAsSb base and a 125-nm InP collector. The GaInAsSb alloy exhibits superior electron and hole transport properties compared with GaAsSb, resulting in improved device performance. The present transistors offer the highest f MAX to date for GaInAsSb DHBTs and match the highest f MAX of any Sb-based DHBT. Show more
Publication status
publishedExternal links
Journal / series
IEEE Electron Device LettersVolume
Pages / Article No.
Publisher
IEEESubject
DHBTs; GaAsSb; GaInAsSb; mm-wave transistorsOrganisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
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