Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients
dc.contributor.author
Bufler, Fabian M.
dc.contributor.author
Erlebach, Axel
dc.contributor.author
Oulmane, Mohamed
dc.date.accessioned
2017-06-08T22:05:35Z
dc.date.available
2017-06-08T22:05:35Z
dc.date.issued
2009
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2009.2027721
dc.identifier.uri
http://hdl.handle.net/20.500.11850/16407
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Mobility
dc.subject
Monte Carlo (MC) device simulation
dc.subject
PMOS
dc.subject
piezoconductance coefficients
dc.subject
stress engineering
dc.title
Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
30
ethz.journal.issue
9
ethz.journal.abbreviated
IEEE Electron Device Lett.
ethz.pages.start
996
ethz.pages.end
998
ethz.identifier.wos
ethz.identifier.nebis
000008013
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.date.deposited
2017-06-08T22:05:41Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c64477e030328
ethz.ecitpid
pub:28281
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-17T09:59:29Z
ethz.rosetta.lastUpdated
2024-02-01T15:35:19Z
ethz.rosetta.versionExported
true
ethz.COinS
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