Abstract
Magnetoelectric force microscopy (MeFM) is characterized as methodical tool for the investigation of antiferromagnetic domain states, in particular of the 180 variety. As reference compound for this investigation we use Cr2O3. Access to the antiferromagnetic order is provided by the linear magnetoelectric effect. We resolve the opposite antiferromagnetic 180 domain states of Cr2O3 and estimate the sensitivity of the MeFM approach, its inherent advantages in comparison to alternative techniques and its general feasibility for probing antiferromagnetic order. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000192516Publication status
publishedExternal links
Journal / series
MaterialsVolume
Pages / Article No.
Publisher
MDPISubject
magnetoelectric force microscopy; antiferromagnetic domains; Cr2O3; Second harmonic generationOrganisational unit
03918 - Fiebig, Manfred / Fiebig, Manfred
Funding
694955 - In-situ second harmonic generation for emergent electronics in transition-metal oxides (EC)
149192 - Functional active defects in condensed-matter systems (SNF)
150635 - Functional active defects in condensed matter systems (SNF)
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