Density functional theory based analysis of the origin of traps at the InAs/Si hetero-interface
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Date
2017-12Type
- Journal Article
Publication status
publishedExternal links
Journal / series
Applied Physics LettersVolume
Pages / Article No.
Publisher
American Institute of PhysicsSubject
Semiconductors; Density functional theory; Transmission electron microscopy; Electronic devices; Chemical bondsOrganisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
Funding
619509 - Energy Efficient Tunnel FET Switches and Circuits (EC)
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