A Scaled Replacement Metal Gate InGaAs-on-Insulator n-FinFET on Si with Record Performance
dc.contributor.author
Hahn, H.
dc.contributor.author
Deshpande, Veeresh
dc.contributor.author
Caruso, Enrico
dc.contributor.author
Sant, Saurabh
dc.contributor.author
O'Connor, E.
dc.contributor.author
Baumgartner, Yannick
dc.contributor.author
Sousa, Marilyne
dc.contributor.author
Caimi, Daniele
dc.contributor.author
Olziersky, Antonis
dc.contributor.author
Palestri, Pierpaolo
dc.contributor.author
Selmi, Luca
dc.contributor.author
Schenk, Andreas
dc.contributor.author
Czornomaz, Lukas
dc.date.accessioned
2018-03-21T09:44:52Z
dc.date.available
2018-03-07T02:02:00Z
dc.date.available
2018-03-21T09:44:52Z
dc.date.issued
2017
dc.identifier.isbn
978-1-5386-3559-9
en_US
dc.identifier.other
10.1109/IEDM.2017.8268410
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/246709
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
A Scaled Replacement Metal Gate InGaAs-on-Insulator n-FinFET on Si with Record Performance
en_US
dc.type
Conference Paper
dc.date.published
2018-01-25
ethz.book.title
2017 IEEE International Electron Devices Meeting (IEDM)
en_US
ethz.pages.start
17.5.1
en_US
ethz.pages.end
17.5.4
en_US
ethz.event
63rd IEEE Annual International Electron Devices Meeting (IEDM 2017)
en_US
ethz.event.location
San Francisco, CA, USA
en_US
ethz.event.date
December 2-6, 2017
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2018-03-07T02:02:18Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-04-01T10:14:52Z
ethz.rosetta.lastUpdated
2022-03-28T19:30:19Z
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true
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