Type-II InP/GaAsXSB1−X DHBTs with simultaneous FT and FMAX >340 Ghz fabricated by contact lithography
dc.contributor.author
Zeng, Yuping
dc.contributor.author
Flückiger, Ralf
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-09T08:05:00Z
dc.date.available
2017-06-09T08:05:00Z
dc.date.issued
2010
dc.identifier.isbn
978-1-4244-5919-3
dc.identifier.other
10.1109/ICIPRM.2010.5515950
dc.identifier.uri
http://hdl.handle.net/20.500.11850/26373
dc.language.iso
en
dc.publisher
IEEE
dc.title
Type-II InP/GaAsXSB1−X DHBTs with simultaneous FT and FMAX >340 Ghz fabricated by contact lithography
dc.type
Conference Paper
ethz.book.title
2010 International Conference on Indium Phosphide and Related Materials : conference proceedings : 22nd IPRM : May 31-June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan
ethz.event
International Conference on Indium Phosphide and Related Materials 2010 (IPRM 2010)
ethz.event.location
Kagawa, Japan
ethz.event.date
May 31 - June 4, 2010
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-09T08:05:28Z
ethz.source
ECIT
ethz.identifier.importid
imp59364d67cc26865843
ethz.ecitpid
pub:44858
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T08:23:56Z
ethz.rosetta.lastUpdated
2021-02-14T06:46:27Z
ethz.rosetta.versionExported
true
ethz.COinS
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Conference Paper [34962]