Search
Results
-
Trapping in proton irradiated p+-n-n+ silicon sensors at fluences anticipated at the HL-LHC outer tracker
(2016)Journal of InstrumentationThe degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 μm thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 3 · 10¹⁵ neq/cm². Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for ...Journal Article