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Impact of low-dose electron irradiation on n+p silicon strip sensors
(2015)Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentThe response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of ...Journal Article