Effects of stair case gate bias stress in IGZO/Al2O3 flexible TFTs
dc.contributor.author
Buonomo, Marco
dc.contributor.author
Wrachien, Nicola
dc.contributor.author
Lago, N.
dc.contributor.author
Cantarella, Giuseppe
dc.contributor.author
Cester, Andrea
dc.date.accessioned
2018-11-26T16:58:54Z
dc.date.available
2018-11-16T05:39:19Z
dc.date.available
2018-11-26T16:58:54Z
dc.date.issued
2018-09
dc.identifier.issn
0026-2714
dc.identifier.issn
1872-941X
dc.identifier.other
10.1016/j.microrel.2018.06.056
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/304142
dc.language.iso
en
en_US
dc.publisher
Elsevier
en_US
dc.subject
Indium gallium zinc oxide
en_US
dc.subject
ALD Al2O3
en_US
dc.subject
Breakdown voltage
en_US
dc.subject
Flexible TFT
en_US
dc.subject
Thin film transistor
en_US
dc.title
Effects of stair case gate bias stress in IGZO/Al2O3 flexible TFTs
en_US
dc.type
Journal Article
dc.date.published
2018-09-30
ethz.journal.title
Microelectronics Reliability
ethz.journal.volume
88-90
en_US
ethz.journal.abbreviated
Microelectron. Reliab.
ethz.pages.start
882
en_US
ethz.pages.end
886
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Kidlington
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2018-11-16T05:39:20Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-11-26T16:59:07Z
ethz.rosetta.lastUpdated
2023-02-06T16:37:17Z
ethz.rosetta.versionExported
true
ethz.COinS
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Journal Article [128906]