Operando Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors
Abstract
The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric α−GeTe and multiferroic Ge1−xMnxTe. We demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal. Additionally, we are also able to follow the switching pathway in detail. In multiferroic Ge1−xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric-field-induced magnetization reversal. This provides firm evidence of magnetoelectric coupling which opens up functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching intertwined with Rashba-Zeeman splitting in a multiferroic system. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000334069Publication status
publishedExternal links
Journal / series
Physical Review XVolume
Pages / Article No.
Publisher
American Institute of PhysicsSubject
Condensed Matter Physics; Materials Science; SpintronicsOrganisational unit
03997 - Heyderman, Laura / Heyderman, Laura
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