Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP, and WS2-Based n-MOSFETs for Future Technology Nodes—Part I: Device-Level Comparison
dc.contributor.author
Agarwal, Tarun K.
dc.contributor.author
Rau, Martin
dc.contributor.author
Radu, Iuliana
dc.contributor.author
Luisier, Mathieu
dc.contributor.author
Dehaene, Wim
dc.contributor.author
Heyns, Marc
dc.date.accessioned
2019-08-09T10:24:37Z
dc.date.available
2019-08-06T02:58:14Z
dc.date.available
2019-08-09T10:24:37Z
dc.date.issued
2019-08
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.other
10.1109/TED.2019.2912005
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/356727
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP, and WS2-Based n-MOSFETs for Future Technology Nodes—Part I: Device-Level Comparison
en_US
dc.type
Journal Article
dc.date.published
2019-05-01
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
66
en_US
ethz.journal.issue
8
en_US
ethz.journal.abbreviated
IEEE Trans. Electron Devices
ethz.pages.start
3608
en_US
ethz.pages.end
3613
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
New York, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.relation.isContinuedBy
20.500.11850/356726
ethz.date.deposited
2019-08-06T02:58:20Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2019-08-09T10:24:54Z
ethz.rosetta.lastUpdated
2023-02-06T17:30:39Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Performance%20Comparison%20of%20s-Si,%20In0.53Ga0.47As,%20Monolayer%20BP,%20and%20WS2-Based%20n-MOSFETs%20for%20Future%20Technology%20Nodes%E2%80%94Part%20I:%20Device-Le&rft.jtitle=IEEE%20Transactions%20on%20Electron%20Devices&rft.date=2019-08&rft.volume=66&rft.issue=8&rft.spage=3608&rft.epage=3613&rft.issn=0018-9383&1557-9646&rft.au=Agarwal,%20Tarun%20K.&Rau,%20Martin&Radu,%20Iuliana&Luisier,%20Mathieu&Dehaene,%20Wim&rft.genre=article&rft_id=info:doi/10.1109/TED.2019.2912005&
Files in this item
| Files | Size | Format | Open in viewer |
|---|---|---|---|
|
There are no files associated with this item. |
|||
Publication type
-
Journal Article [128813]