The Impact of Multi-MHz Switching Frequencies on Dynamic On-Resistance in GaN-on-Si HEMTs
- Journal Article
Rights / licenseCreative Commons Attribution 4.0 International
Dynamic on-resistance (dR on ), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dR on measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dR on measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dR on . For the tested HEMT, we find a maximum dR on increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application. Show more
Journal / seriesIEEE Open Journal of Power Electronics
Pages / Article No.
SubjectDynamic ON-state resistance; Gallium nitride; Power transistors; Wide bandgap semiconductors
Organisational unit03573 - Kolar, Johann W. / Kolar, Johann W.
MoreShow all metadata