Growth of AlAsSb/InGaAs MBE-layers for all-optical switches
dc.contributor.author
Cristea, P.
dc.contributor.author
Fedoryshyn, Y.
dc.contributor.author
Jäckel, H.
dc.date.accessioned
2017-06-09T19:38:15Z
dc.date.available
2017-06-09T19:38:15Z
dc.date.issued
2005-05
dc.identifier.issn
0022-0248
dc.identifier.issn
1873-5002
dc.identifier.other
10.1016/j.jcrysgro.2004.12.177
dc.identifier.uri
http://hdl.handle.net/20.500.11850/46661
dc.language.iso
en
dc.publisher
Elsevier
dc.subject
Interfaces
dc.subject
A1. Photoluminescence
dc.subject
A1. X-ray diffraction
dc.subject
A3. δ-doping
dc.subject
A3. Quantum wells
dc.subject
B1. InGaAs/AlAsSb
dc.title
Growth of AlAsSb/InGaAs MBE-layers for all-optical switches
dc.type
Journal Article
ethz.journal.title
Journal of Crystal Growth
ethz.journal.volume
278
ethz.journal.issue
1-4
ethz.journal.abbreviated
J Cryst Growth
ethz.pages.start
544
ethz.pages.end
547
ethz.notes
Available online 17 February 2005.
ethz.identifier.nebis
000049301
ethz.publication.place
Amsterdam
ethz.publication.status
published
ethz.leitzahl
03386 - Jäckel, Heinz
ethz.leitzahl.certified
03386 - Jäckel, Heinz
ethz.date.deposited
2017-06-09T19:38:34Z
ethz.source
ECIT
ethz.identifier.importid
imp59364f01758bd81008
ethz.ecitpid
pub:76638
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T08:39:52Z
ethz.rosetta.lastUpdated
2020-02-14T09:36:52Z
ethz.rosetta.versionExported
true
ethz.COinS
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Journal Article [128892]