Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Abstract
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000482925Publication status
publishedExternal links
Journal / series
IEEE Transactions on Nuclear ScienceVolume
Pages / Article No.
Publisher
IEEESubject
Silicon Carbide; Power MOSFETs; neutrons; Single Event Effects; Single Event Burnout; gate damageOrganisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike
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