Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs
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Date
2012-04Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Journal of Applied PhysicsVolume
Pages / Article No.
Publisher
American Institute of PhysicsNotes
Received 24 January 2012, Accepted 28 February 2012, Published online 10 April 2012.More
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ETH Bibliography
yes
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