A gate drive circuit for silicon carbide JFET
dc.contributor.author
Mino, Kazuki
dc.contributor.author
Herold, Simon
dc.contributor.author
Kolar, Johann W.
dc.date.accessioned
2017-06-10T02:55:46Z
dc.date.available
2017-06-10T02:55:46Z
dc.date.issued
2003
dc.identifier.isbn
0-7803-7906-3
dc.identifier.other
10.1109/IECON.2003.1280217
dc.identifier.uri
http://hdl.handle.net/20.500.11850/52352
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Gate drive circuit
dc.subject
Silicon carbide
dc.subject
JFET
dc.subject
Switching behavior
dc.title
A gate drive circuit for silicon carbide JFET
dc.type
Conference Paper
ethz.book.title
IECON’03
ethz.journal.volume
2
ethz.pages.start
1162
ethz.pages.end
1166
ethz.event
29th Annual Conference of the IEEE Industrial-Electronics-Society (IECON 2003)
ethz.event.location
Roanoke, VA, USA
ethz.event.date
November 2-6, 2003
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.date.deposited
2017-06-10T02:57:47Z
ethz.source
ECIT
ethz.identifier.importid
imp59364f7c8880747571
ethz.ecitpid
pub:85057
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T20:33:57Z
ethz.rosetta.lastUpdated
2024-02-01T18:58:24Z
ethz.rosetta.versionExported
true
ethz.COinS
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