Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition
dc.contributor.author
Thomas, Shawn G.
dc.contributor.author
Bharatan, Sushil
dc.contributor.author
Jones, Robert E.
dc.contributor.author
Thoma, Rainer
dc.contributor.author
Zirkle, Thomas
dc.contributor.author
Edwards, N. V.
dc.contributor.author
Liu, Ran
dc.contributor.author
Zhang, Xiang-Dong
dc.contributor.author
Xie, Qianghua
dc.contributor.author
Rosenblad, Carsten
dc.contributor.author
Ramm, Jürgen
dc.contributor.author
Isella, Giovanni
dc.contributor.author
von Känel, Hans
dc.date.accessioned
2017-06-10T07:42:41Z
dc.date.available
2017-06-10T07:42:41Z
dc.date.issued
2003-09
dc.identifier.issn
0361-5235
dc.identifier.issn
1543-186X
dc.identifier.other
10.1007/s11664-003-0233-9
dc.identifier.uri
http://hdl.handle.net/20.500.11850/54086
dc.language.iso
en
dc.publisher
Springer
dc.subject
SiGe
dc.subject
Graded buffer
dc.subject
Threading dislocation
dc.subject
Optoelectronics
dc.title
Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition
dc.type
Journal Article
ethz.journal.title
Journal of Electronic Materials
ethz.journal.volume
32
ethz.journal.issue
9
ethz.journal.abbreviated
J. Electron. Mater.
ethz.pages.start
976
ethz.pages.end
980
ethz.identifier.wos
ethz.identifier.nebis
000049314
ethz.publication.place
Warrendale
ethz.publication.status
published
ethz.date.deposited
2017-06-10T07:43:14Z
ethz.source
ECIT
ethz.identifier.importid
imp59364fa239be687888
ethz.ecitpid
pub:87411
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T11:06:30Z
ethz.rosetta.lastUpdated
2022-03-28T10:56:17Z
ethz.rosetta.versionExported
true
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